| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XXIV
|
| Presentation Title |
Computational Simulation of Interfacial Bonding Behavior with Various Grain Structures in Cu-Cu Bonding |
| Author(s) |
Hiroaki Tatsumi |
| On-Site Speaker (Planned) |
Hiroaki Tatsumi |
| Abstract Scope |
Recently, Cu-Cu bonding has been attracting attention as a high-reliability bonding technology for advanced packaging. Cu-Cu bonding processes, which are traditionally known as solid-state diffusion bonding, progress dominantly by diffusion phenomena at the bonding interface. In particular, the void closure process at the bonding interface is of particular interest for reliable joints. However, atomic-scale diffusion phenomena have not been clarified due to the limitations of experiments. Therefore, in this study, we attempted to evaluate the void closure process at the bonding interface, dominated by diffusion, using molecular dynamics (MD) simulation. Various grain structures, including nanocrystalline (NC) and nanotwinned (NT) structures, were modeled. These grain structure models were subjected to bonding simulation and atom displacement analyses. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Modeling and Simulation, Joining |