| About this Abstract |
| Meeting |
MS&T23: Materials Science & Technology
|
| Symposium
|
Advances in Dielectric Materials and Electronic Devices
|
| Presentation Title |
D-7: Investigation of the Dielectric Response in AgNbO3-based Ferroelectric Ceramics |
| Author(s) |
Tawan Hathenher Toledo Rosa, Atair Carvalho da Silva, Ruyan Guo, Amar S. Bhalla, Jose de los Santos Guerra |
| On-Site Speaker (Planned) |
Jose de los Santos Guerra |
| Abstract Scope |
In this work, lead-free AgNbO3 ceramic system has been synthesized via solid-state reaction sintering method. The physical properties have been investigated considering the influence of the lanthanum concentration on both structural and dielectric properties. High-density materials have been obtained, revealing the formation of the pure perovskite structure, without secondary phases. The dielectric response and, in particular, the dielectric relaxation processes have been explored and carefully analyzed over a wide frequency interval, for temperatures below and above the ferroelectric-paraelectric phase transition temperature (TC). Results have been discussed within the framework of the distribution functions formalisms proposed in the literature for the dielectric relaxation, which have been used for a better understanding of the involved relaxation mechanisms. ACKNOWLEDGMENTS: The authors thank to CNPq (309494/2022-2), FAPEMIG (PPM-00661-16 and APQ-02875-18) and CAPES (Finance Code 001) from Brazil, and NSF and ONR from USA, for the financial support. |