| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Radiation Effects in Metals and Ceramics
|
| Presentation Title |
Near-surface Disorder in 4H-SiC Induced by MeV light Ion Irradiation |
| Author(s) |
John Derek Demaree, Noel Guardala, Zois Tsinas, Eaman T. Karim, Mohamad I. Al-Sheikhly |
| On-Site Speaker (Planned) |
John Derek Demaree |
| Abstract Scope |
Single-crystal silicon carbide (4H-SiC) was irradiated with H and He ions at energies near significant elastic scattering resonances in order to determine whether the enhanced production of high energy recoils at those resonances can significantly affect the radiation damage induced in the material. The extent and nature of this disorder was investigated with ion beam channeling and Raman spectroscopy. The amount of chemical disorder in the crystal - i.e., the number of antisite defects and homonuclear bonds as measured by Raman spectroscopy - suggests that the Monte Carlo program SRIM correctly predicts the number of target atom displacements, and no evidence of enhanced damage from resonant scattering is observed. Furthermore, ion beam channeling measurements indicate that the overall amount of amorphization (loss of crystallinity) is significantly lower than expected, likely due to ionization-induced recrystallization or recombination in the defect cascade, as has previously been noted in heavy ion irradiation studies. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |