| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advanced Microelectronic Packaging, Emerging Interconnection Technology and Pb-free Solder
|
| Presentation Title |
Reducing Interfacial Voids in Cu/In/Cu Microbump with In-Sn-Cu Solder Alloy |
| Author(s) |
Rui Wen Song, Jenq Gong Duh |
| On-Site Speaker (Planned) |
Rui Wen Song |
| Abstract Scope |
3D-IC is an ongoing trend and challenge in electronic packaging industry, and the microbump reliability has been attracting lots of interests. To overcome the reliability or manufacturing challenges, such as warpage and low thermal budget, low melting point solder alloys are increasingly studied. Although Indium-rich solder has a beneficial low melting point of 156°C, the formation of interfacial voids after bonding has raised concerns for reliability. By introducing Cu and Sn, the solder remained low melting points and the interfacial voids were significantly reduced. The melting point of Cu-Sn-In alloys were measured by DSC to ensure that there is no additional phase transformation at higher temperature. In addition, the interfacial IMCs phases were characterized by EPMA and XRD. Moreover, the grain structure was also altered by adjusting Cu and Sn compositions, and thus better mechanical reliability could be expected. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |