| Abstract Scope |
Novel materials are needed to meet the growing demand for resilient electronics in extreme environments. Two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit a unique duality of high radiation tolerance and impressive computing performance. Only a handful of 2D materials have been studied under radiation environments and a dedicated effort is still needed to relate 2D material composition and radiation tolerance. Here, we subject monolayer TMDs (MoS2, MoSe2, MoTe2, WS2) to ion irradiations (fluence range: 10^13-10^16 cm^-2). TMD sputtering rates are measured using X-ray photoelectron spectroscopy (XPS) to elucidate composition-dependence. XPS reveals chalcogen sputtering rate increases with increasing chalcogen mass and decreasing vacancy formation energy (VFE). Scanning transmission electron microscopy confirms XPS-measured trends. We find that our experimental results are well described by calculated VFEs. This work directly compares radiation effects as a function of key TMD properties: molar mass, free energy of formation, and heat of vacancy formation.
This work was supported by a Laboratory Directed Research & Development program at Sandia National Laboratories. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. DOE’s National Nuclear Security Administration under contract DE-NA-0003525. The views expressed in the article do not necessarily represent the views of the U.S. DOE or the United States Government. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. |