| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advanced Microelectronic Packaging, Emerging Interconnection Technology and Pb-free Solder
|
| Presentation Title |
Study on the UBM Thickness and Current Flow Configuration Effects on Electromigration Failure Mechanism in Solder Interconnects |
| Author(s) |
Yi Ram Kim, Allison Theresa Osmanson, Hossein Madanipour, Choong-Un Kim, Patrick Thompson, Qiao Chen |
| On-Site Speaker (Planned) |
Yi Ram Kim |
| Abstract Scope |
This study reports the results of our investigation of the electromigration (EM) failure mechanism in solder interconnects with varying under bump metallization (UBM) thickness and two different current flow configurations, asymmetry and symmetry. This study is motivated to investigate the mechanism by which the EM kinetics is affected by the Cu UBM thickness and/or current flow configuration. For a comparative study, we conduct EM testing of three different UBM thickness samples under different current flow configurations. Surprisingly, we find that EM failure kinetics is affected by UBM thickness in a more complicated manner. The failure is not linearly scaled with UBM thickness. An optimum UBM thickness for the most beneficial effect exists. While the mechanism is currently not so clear, we believe that it has to do with the balance between the delayed void nucleation by supply of Cu and the delay in the void growth by thermal stress. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |