| Abstract Scope |
Finding ways to protect our technology from intellectual theft has become increasingly needed in recent years. While most people think of technology security in terms of software, many neglect the need to bolster the protection of our hardware. With the U.S. pushing towards being a lead innovator in metal-oxide semiconductor field-effect transistors (MOSFETs), our innovations must have built-in protection to negate any chance of being stolen through reverse engineering. To aid this endeavor, we propose an alternative method of making MOSFETs by utilizing the structural phases of molybdenum di-sulfide (MoS2). Using a 30kV electron beam at 500pA, we expose MoS2 flakes mounted on an SiO2 substrate to a variety of electron beam doses to create patterns of its 1T metallic phase surrounded by the rest of its 2H semiconductor phase. Through this method, di-material logic gates are possible which will substantially fortify device security as a result. |