| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advanced Microelectronic Packaging, Emerging Interconnection Technology and Pb-free Solder
|
| Presentation Title |
Die-bonding Performance and Mechanism of Ag Micron Paste with Pressure-less Sintering |
| Author(s) |
Tetsu Takemasa, Shingo Ishihara, Junya Kano, Katsuaki Suganuma |
| On-Site Speaker (Planned) |
Tetsu Takemasa |
| Abstract Scope |
Wide-bang gap semiconductors such as SiC and GaN have many advantages including energy saving and high-power capability and are expected as the new semiconductors substituting traditional Si. To bond these SiC/GaN dies to substrates securely, the die-bonding materials are required to stand high-temperature environment and possess superior heat and electronic-conducting properties as well as excellent reliability. Recently, Ag micron particle paste has been developed to show good performance such as high-temperature reliability and high electronic conductivity.
In this study, the Ag micron paste was used to connect Si dies to Ag metallized substrate. The die-loading process cause fine and rough density structure in the Ag sintered joint and the joint quality was affected by the die-loading speed and push-in height. The fluid simulation indicates that the Ag paste flow which is caused by the die-loading is not uniform, and nonuniform flow makes nonuniform joint structure. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |