| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Recent Advances in Functional Materials and 2D/3D Processing for Sensors and Electronic Applications
|
| Presentation Title |
Novel Wide Bandgap Gallium Oxide (Ga2O3) Based Power Electronic Devices |
| Author(s) |
Parans Parans Paranthaman, Mihee Ji, Tolga Aytug, Fred A. List, Pooran Joshi, Ivan Kravchenko, Burak Ozpineci |
| On-Site Speaker (Planned) |
Parans Parans Paranthaman |
| Abstract Scope |
The main goal of this project is to demonstrate the growth of high-mobility, epitaxial gallium oxide, Ga2O3, films on sapphire and gallium oxide substrates for 1-5 kV power device fabrication. Advanced power electronics enabled by wide bandgap (WBG) semiconductors offers the opportunity to significantly lower global electrical energy consumption, by more than 25% in 2025. Ga2O3 has unique properties with a bandgap of 4.8-4.9 eV that is significantly larger than those of SiC and GaN and offers the advantages of inexpensive substrates having superior breakdown voltages, higher efficiencies, and higher power capacity devices. Current methods to make GaN devices lead to prohibitively high costs and SiC substrates material quality is far from ideal. We will report our results on the growth of epitaxial Ga2O3 thin film growth with high mobility and less defects on cheaper substrate, and device fabrication. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |