| About this Abstract |
| Meeting |
MS&T23: Materials Science & Technology
|
| Symposium
|
Advances in Dielectric Materials and Electronic Devices
|
| Presentation Title |
Engineering the Carrier Density for Thin Film Transistors Using Multimodal Encapsulation of p-SnOx |
| Author(s) |
Donghun Lee, Joonsoo Choi, Han Wook Song, Sunghwan Lee |
| On-Site Speaker (Planned) |
Donghun Lee |
| Abstract Scope |
The synthesis of p-SnOx (1≤x<2) and the engineering of electrical properties (carrier density and mobility) has been a challenge due to the narrow processing window and localized oxygen 2p orbitals near the valence band. A recent study, processing of p-SnOx and an oxide-based p-n heterostructure, demonstrating high on/off rectification ratio, low turn-on voltage, and low saturation current was reported. However, low dopability in p-SnOx limits the ability to engineer the electrical properties. To address this, this study encapsulated p-SnOx to limit oxygen surface adsorption and selectively permeate hydrogen into the p-SnOx channel. Time-of-flight secondary ion mass spectrometry measurements identified that ultra-thin SiO2 effectively suppressed oxygen adsorption and selectively augmented hydrogen density in p-SnOx. Encapsulated p-SnOx TFTs demonstrated enhanced channel conductance modulation, with higher on-state current and lower off-state current. The study discusses the relationship between TFT performance and oxygen suppression and hydrogen permeation, using DFT calculations to support their findings. |