About this Abstract |
Meeting |
MS&T22: Materials Science & Technology
|
Symposium
|
Controlled Synthesis, Processing, and Applications of Structural and Functional Nanomaterials
|
Presentation Title |
H-11: The Synaptic Devices Based on Ferroelectric Hf0.7Zr0.3O2 Thin Film |
Author(s) |
Hojin Lee, Joonbong Lee, Taekjib Choi |
On-Site Speaker (Planned) |
Hojin Lee |
Abstract Scope |
Strong interest in resistive switching phenomena is driven by a possibility to develop electronic devices with novel functional properties not available in conventional systems. Bistable resistive devices are characterized by two resistance states that can be switched by an external voltage. Recently, ferroelectric memristors divices with continuously tunable resistive behavior have emerged as a new paradigm for nonvolatile memories and adaptive electronic circuit elements. Emerging ferroelectric tunnel memristors show stable resistance states and high operation speed, promising to be applied the synapse divice. Using models of ferroelectric-polarization control and growth, we explain the quasi-continuous resistance variations and derive mechanism for the memristive effect in Hf0.7Zr0.3O2 thin film. Our result provides a route for ferroelectric memristor divices as the future synapse system. |