| Abstract Scope |
With the arrival of the AI age, the enormous amount of power consumption of computers causes global warming.
Oxide semiconductor LSI (OSLSI) uses crystalline indium–gallium–zinc oxide (IGZO), which we named CAAC-IGZO, or crystalline indium oxide (IO) including single crystal IO as its core material. OSLSI exhibits an extremely low off-state current in the order of yA (10-24 A)/μm, which is 10 orders of magnitude lower than that of Si FETs. We have recently discovered that OSLSI exhibits excellent frequency characteristics even when miniatured.
We are developing various highly integrated FET structures that consume extremely low power. Our goal is to reduce the power consumption of computers to 1/100 by using OSLSI, and we are currently collaborating with a Taiwanese LSI company and a major U.S. LSI company. In this lecture, I will introduce how to achieve extremely low power consumption using our OSLSI technology in more detail. |