| Abstract Scope |
Studies looking at point defects in 2D transition metal dichalcogenides (TMDs) have mostly focused on chalcogen vacancies. However, in recent years there has been growing suspicion that the primary defects in single crystals of TMDs, and subsequently derived monolayers, are not vacancies but are instead oxygen substitutions on the chalcogen site. In this talk, I'll focus on the role that different growth parameters play on the concentration of these oxygen substitutions. I will show how optimizing the starting growth materials and by using different growth methods can reduce these oxygen substitutions, while simultaneously improving overall crystal size. Finally, I will comment on the role of the growth ampoules, which, to date, has been entirely ignored for the growth of TMDs. |