| About this Abstract |
| Meeting |
2024 TMS Annual Meeting & Exhibition
|
| Symposium
|
Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XXIII
|
| Presentation Title |
Active Metal Brazing for Fabricating Cu/Si3N4/Cu Substrates with Ag-Cu-Ti Pastes |
| Author(s) |
Shih-kang Lin, Chia-mei Chen, Shih-yuan Cheng, Chih-han Yang, Klinsmenn Pan, Megan Huang, Vincent Hsu |
| On-Site Speaker (Planned) |
Shih-kang Lin |
| Abstract Scope |
Substrates with efficient heat dissipation capability is required for the third-generation semiconductor, e.g., SiC and GaN, packages. Si3N4 possesses high thermal conductivity and is a promising insulating substrate material as compared with the conventional Al2O3 substrate. However, its bonding with Cu conducting pads cannot be simply done via the CuO and Al2O3 eutectic reaction. Herein, we utilized active metal brazing (AMB) process with Ag-Cu-Ti filler to fabricate Cu/Si3N4/Cu substrates, for which the interfacial voids were the main reliability concern. We systematically investigated the processing parameters as well as materials combinations. In the presentation, the void formation mechanism will be elaborated, and the cost-effective void mitigation strategy will be proposed. The fundamental understanding of AMB can be applied to other metal/ceramic joint systems, supporting the development of heterogeneous integration in electric vehicles, green energy, and high-power applications. |
| Proceedings Inclusion? |
Planned: |