About this Abstract |
| Meeting |
MS&T24: Materials Science & Technology
|
| Symposium
|
Advances in Dielectric Materials and Electronic Devices
|
| Presentation Title |
Hot Carrier Injection in 65nm n-LDMOS |
| Author(s) |
Emad Rezaei, Arash Elhami Khorasani, Mark Griswold, Guantong Zhou |
| On-Site Speaker (Planned) |
Emad Rezaei |
| Abstract Scope |
Extended service duration and elevated operation voltage amplify the electric fields and the likelihood of impact ionization in laterally diffused metal-oxide semiconductor (LDMOS) devices. Therefore, Hot carrier injection (HCI) is a degradation mechanism frequently observed in LDMOS transistors. Conducting a thorough investigation to comprehend the hot carrier injection effect in LDMOS could prove advantageous for enhancing device efficiency. In this study, we adopted a physics-based methodology to analyze hot carrier injection in LDMOS and identified the factors that are prone to affecting hot carrier reliability. We assessed both design and operational parameters and demonstrated a 50% reduction in degradation. |