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Meeting 2024 TMS Annual Meeting & Exhibition
Symposium Computational Discovery and Design of Materials
Presentation Title Model of defect evolution and electrical performance of semiconductor devices under ionizing radiation
Author(s) Xiaoyu Guan, Michael Tonks
On-Site Speaker (Planned) Xiaoyu Guan
Abstract Scope Effectiveness and efficiency of semiconductor devices when working in ionizing radiation environments are crucial. We developed mesoscale finite element model to predict the degradation of the electrical performance of irradiated semiconductor devices by using the Multi-physics Object-Oriented Simulation Environment (MOOSE) framework. By monitoring defect evolution, dynamics of local carriers, change in materials properties, and recovery process under charged defects, we determined the cumulative and single event radiation effects of the devices. This model is coupled with MC model to investigate radiation effects of devices and can be used in designing more radiation hard devices. The modeling capability will be open source, have robust quality assurance practices, and be able to take advantage of large computing clusters.
Proceedings Inclusion? Planned:
Keywords Electronic Materials, Modeling and Simulation,

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