| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Radiation Effects in Metals and Ceramics
|
| Presentation Title |
H-29: Electronic Effects in Molecular Dynamics Simulations of Ion Irradiation of SiC |
| Author(s) |
Eva Zarkadoula, German Samolyuk, Yanwen Zhang, William J Weber |
| On-Site Speaker (Planned) |
Eva Zarkadoula |
| Abstract Scope |
Due to its physical properties, silicon carbide is a suitable material for high temperature applications and extreme radiation environments. In this work, the effects of the electronic energy loss in ion irradiation of SiC are investigated, using molecular dynamics simulations. The coupled effects of the nuclear and the electronic energy loss in the energy dissipation and damage production in primary radiation damage in SiC are discussed. The results reveal that, in the intermediate energy range, the electronic stopping results in a smaller number of surviving defects. Understanding of the primary radiation damage processes is necessary in order to be able to predict and control the material’s performance. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |