| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advanced Microelectronic Packaging, Emerging Interconnection Technology and Pb-free Solder
|
| Presentation Title |
Effect of a Metallic Cap Layer on the Magnitude, Statistical Variation and Mechanism of Through-Silicon Via Extrusion |
| Author(s) |
Golareh Jalilvand, Tengfei Jiang |
| On-Site Speaker (Planned) |
Golareh Jalilvand |
| Abstract Scope |
The statistical variation of via extrusion is an important reliability issue for TSV-based 3D-IC, as the overall reliability of the device is limited by the weakest link, i.e. a small number of vias with the highest extrusion.
In a novel approach, an effective reduction in the statistical variation of TSV extrusion is demonstrated by the application of a metallic cap layer on the top surface of the vias. Furthermore, using focused ion beam, electron backscatter diffraction and white light interferometry, we investigate the correlation between the microstructure and the magnitude of via extrusion and show how this correlation is affected by the presence of the cap layer. Results from the uncoated vias reveal a direct microstructure-extrusion correlation while no such correlation is observed in capped vias. This clearly suggests the significance of mass transport along grain boundaries, which as a main extrusion mechanism, is effectively controlled by the cap layer. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |