| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials II
|
| Presentation Title |
Low Temperature Cu-Cu Direct Bonding in Air ambient by Ultrafast Surface Grain Growth |
| Author(s) |
Yun-Fong Lee |
| On-Site Speaker (Planned) |
Yun-Fong Lee |
| Abstract Scope |
Ultra fine-grain (UFG) Cu films (grain size: 100.36 nm) with near-atomic-scale surface (Roughness:0.39 nm) were electroplated. Without advanced post surface treatment, Cu-Cu direct bonding can be achieved with present ultra fine-grain Cu films at 130 ℃ in air ambient with minimum pressure (1 MPa). The instantaneous growth rate(dR/dt) at the first day is 164.29 nm/day. Meanwhile, The average growth rate (∆R/∆t) of the first day is 218.185 nm/day and 105.58 nm/day during the 14 days. Ultrafast grain-growth and near-atomic-scale surface facilitate grain-boundary motion across bonding interface, which is the key to achieve Cu-Cu direct bonding at 130 ℃ in air ambient. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Electrometallurgy, Copper / Nickel / Cobalt |