| About this Abstract |
| Meeting |
MS&T23: Materials Science & Technology
|
| Symposium
|
Advances in Dielectric Materials and Electronic Devices
|
| Presentation Title |
Influence of Electron Beam Irradiation on the Electrical and Optical Properties of InGaZnO Thin Film Transistor |
| Author(s) |
Byung-Hyuk Jun, Daejong Kim, Hyeon-Geun Lee |
| On-Site Speaker (Planned) |
Byung-Hyuk Jun |
| Abstract Scope |
InGaZnO(IGZO) thin film transistors(TFTs) were fabricated on p+-type Si substrate with SiO2 layer of 100nm using a sol-gel process. The beam energy and current for electron irradiation were 0.1MeV and 1mA, respectively. As electron beam(EB) dose increased, the electrical characteristic of IGZO TFTs changed from semiconductor to conductor due to the increased electron concentration by oxygen vacancy, and the threshold voltage values shifted to negative direction. X-ray photoelectron spectroscopy of O 1s core level showed that the relative area of oxygen vacancies increased from 14.68 to 19.08% as EB dose increased from 0 to 1.5×1016 electrons/cm2, then it decreased to 17.7% at 4.5×1016 electrons/cm2. Spectroscopic ellipsometer analysis showed that optical band gap varied from 3.39 to 3.46eV with increasing to 4.5×1016 electrons/cm2. Fermi level(EF) of the sample irradiated with 1.5×1016 electrons/cm2 was located at the closest position to conduction band minimum due to the increase of electron carrier concentration. |