| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Special Topics in Nuclear Materials: Lessons Learned; Non-Energy Systems; and Coupled Extremes
|
| Presentation Title |
Cavity Formation Induced by Swift Heavy Ion Irradiation in AlN/GaN |
| Author(s) |
Mahjabin Mahfuz, Farshid Reza, Xingyu Liu, Rongming Chu, Maik Lang, Michael Snure, Xing Wang, Miaomiao Jin |
| On-Site Speaker (Planned) |
Mahjabin Mahfuz |
| Abstract Scope |
Gallium Nitride is a promising wide-bandgap semiconductor with potential applications in space environments where swift heavy ion (SHI) irradiation damage is prevalent. We investigated the effects of 950 MeV Au ions on GaN/AlN samples by combining Transmission Electron Microscopy (TEM) and Molecular Dynamics (MD) simulations. TEM analysis revealed dominant nanometer-sized cavities in GaN and reduced density and size of cavities in AlN along the ion track, without apparent amorphization in the bulk. An increase in fluence led to larger cavities in GaN, where the diameter expanded from 1.8 to 2.1 nm. MD simulations corroborated the presence of cavities in GaN, noting an increase in size with overlapping SHI impact. By contrast, the simulations indicated an absence of cavities in AlN. This study discusses the distinct responses of AlN and GaN to SHI irradiation, which can cause interfacial strain in composite materials and affect GaN-based device performance. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Other, Other |