| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XIX
|
| Presentation Title |
4D Characterization of Electromigration-induced Grain Boundary Damage of Cu Interconnects: X-ray Tomography Experiments and Phase-field Simulations |
| Author(s) |
William Farmer, Amey Luktuke, Marion Branch Kelly, Nikhilesh Chawla, Kumar Ankit |
| On-Site Speaker (Planned) |
Kumar Ankit |
| Abstract Scope |
Electromigration (EM) damage in polycrystalline interconnects, which causes major reliability concerns, typically nucleates at the surface and manifests as slits or hillocks. Although isolated experimental investigations and characterization of EM-defects using TEM have provided a rudimentary understanding, in-depth knowledge of failure mechanisms is warranted for efficient design and implementation of EM-inhibiting strategies. Here, we leverage our expertise in phase-field modeling, 3D X-ray imaging, and diffraction contrast tomography to achieve a fundamental understanding of the diffusional mechanisms accompanying grain boundary (GB) grooving and its subsequent degradation in copper interconnects. An in-depth parametric study sheds light on the dynamics of the intricate interplay between coarsening and GB slit propagation wherein multi-junctions are observed to be more susceptible to damage. Our 4D validation approach, which involves in situ visualization of microstructural degradation during accelerated EM-failure tests and a direct comparison with phase-field simulations, would enable accurate prediction of EM-induced failure in the future. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |