| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials II
|
| Presentation Title |
Electrochemical Migration Behavior and Its Improvement of Fine-Pitch Ag Interconnects |
| Author(s) |
Hung-Lin Chen, Fan-Yi Ouyang |
| On-Site Speaker (Planned) |
Hung-Lin Chen |
| Abstract Scope |
As the spacing between metal wires in electronic components decreases, electrochemical migration damage has become a significant concern. Under certain temperatures, high humidity, and bias voltage, this issue arises easily. In this study, sputtered silver wires with 100 μm spacing were used to investigate electrochemical migration using a water drop test, with real-time leakage current measurement via LabVIEW software. The failure mechanism was found to be short circuit failure induced by Ag dendritic formation between interconnects. To improve the electrochemical migration resistance of Ag interconnects, we proposed to adopt surface treatments with MPTMS and NDM molecules created self-assembling layers (SAMs) on Ag interconnects. The microstructure evolution and electrochemical migration resistance on SAM-treated and un-treated samples were investigated and compared. |
| Proceedings Inclusion? |
Planned: |