| About this Abstract |
| Meeting |
MS&T24: Materials Science & Technology
|
| Symposium
|
Advances in Dielectric Materials and Electronic Devices
|
| Presentation Title |
Study of Microstructure and Chemistry of Ge-Rich GST Materials Electrically Stressed by C – AFM for Phase Change Memories Applications |
| Author(s) |
Chaymaa Boujrouf, Marc Bocquet, Loic Patout, Alain Portavoce, Yannick Le Friec, Ahmed Charai |
| On-Site Speaker (Planned) |
Chaymaa Boujrouf |
| Abstract Scope |
The present study contributes to the ongoing advancement of innovative materials for phase change memory applications. The evolving specifications for these materials require a thorough understanding of material behavior, for ensuring reliability, especially in challenging environments such as high-temperatures or strain, as seen in applications involving components like automotive microcontrollers.
The studied material is composed of Germanium, Antimony and Tellurium alloy (GST). GST undergoes rapid and reversible heat-induced transitions between amorphous (high resistivity) and crystalline states (low resistivity). These operations, referred to as SET and RESET enable electrical switching.
Here, we examine the structure and chemical composition of Ge-rich GST. Conductive AFM is used to electrically stimulate samples, enabling SET/RESET switching. Local regions electrically stressed are meticulously analyzed with high-resolution TEM. The chemical compositions and crystalline structures are identified. The insights gained from this study contribute to the advancement of GST-based applications by improving our understanding of the structure-property relationship. |