| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Functional Nanomaterials 2020: Translating Innovation into Pioneering Technologies
|
| Presentation Title |
N-60: Thermal Stability of Hafnium Zirconium Oxide on Transition Metal Dichalcogenides |
| Author(s) |
Maria Gabriela Sales, Shelby Fields, Samantha Jaszewski, Sean Smith, Jon Ihlefeld, Stephen McDonnell |
| On-Site Speaker (Planned) |
Maria Gabriela Sales |
| Abstract Scope |
Ferroelectric materials have promising applications in ferroelectric-based transistors for memory and logic, but having a high-quality interface with the semiconducting material presents a challenge. Transition metal dichalcogenides (TMDs) offer a potentially improved interface with ferroelectrics because of their 2D structure with no out-of-plane dangling bonds. For integration of these materials into devices, stability in high temperature processing conditions is required. Therefore, the focus of this work is the thermal stability of the interface of ferroelectric materials with TMDs. For the ferroelectric material, a thin layer of a hafnia and zirconia mixture, HfxZr1-xO2, is grown on TMDs through atomic layer deposition (ALD). Two different types of TMD substrates are compared: geological MoS2 available commercially and WSe2 grown via molecular beam epitaxy (MBE). In addition, the effect of MoS2 functionalization prior to ALD growth is exhibited. X-ray photoelectron spectroscopy (XPS) is the main technique employed to study these ferroelectric/TMD interfaces. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |