| About this Abstract |
| Meeting |
2021 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advanced Functional and Structural Thin Films and Coatings
|
| Presentation Title |
Localization of Dopants and Optical Properties of Phosphorus Doped Silicon Nanocrystals |
| Author(s) |
Herve Rinnert, Alaa Eldin Giba, Fatme Trad, Mathieu Stoffel, Xavier Devaux, Alexandre Bouché, Michel Vergnat, Rémi Demoulin, Etienne Talbot, Anne-Sophie Royet, Pablo Acosta Alba, Sébastien Kerdiles |
| On-Site Speaker (Planned) |
Herve Rinnert |
| Abstract Scope |
During the last decades, silicon nanocrystals (Si-NCs) have attracted a great attention due to their size dependent optical properties. Doping appears as a possible route to tune and extent their properties. While doping, co-doping and hyperdoping have been reported by several groups, many fundamental questions remain open. It is indeed highly challenging to control the localization, the quantity and the activity of dopants. Here, the attention is focused on phosphorus doped Si-NCs, obtained by the phase separation process in P-doped SiOx/SiO2 multilayers, deposited by e-beam evaporation. Laser thermal annealing was carried out to improve the dopants activation. It is shown that P doping promotes the phase separation process and plays a strong role on the photoluminescence. The emission properties of doped Si-NCs will be discussed in relation with the P content and the localization of dopants at the nanoscale analyzed by atom probe tomography and scanning transmission electron microscopy. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Nanotechnology, Thin Films and Interfaces, Characterization |