| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials – Preparation, Properties, Modeling & Applications
|
| Presentation Title |
Mesoscale Simulation of Electrical Performance Degradation on Electronics Due to Defects and Carriers Dynamics Induced by Ionizing Radiation |
| Author(s) |
Xiaoyu Guan |
| On-Site Speaker (Planned) |
Xiaoyu Guan |
| Abstract Scope |
The effects of ionizing irradiation on the performance of electronic devices can be told by current in use, carrier generation and recombination etc. in mesoscale. It is found diodes and MOSFETs react to ionizing radiation with current drop and increasing recombination amount under forward bias. With the application in opto-electronic devices, this result reveals how ionizing irradiation impacts the electron-hole recombination that are responsible for light generation. Under reverse bias, we also track the current and capacity of diodes and the opposite ways of degradation has been found. Hole trapping in the oxide layer may also affect MOSFETs performance. With its high usage in memory devices, this result predicts the lifetime and reliability of a structure in use. A combination of binary collision Monte Carlo and mesoscale simulation methods are incorporated in the model to understand the types of effects ionizing radiation has on materials and consequences on performance. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Energy Conversion and Storage, Modeling and Simulation, |