| About this Abstract |
| Meeting |
MS&T24: Materials Science & Technology
|
| Symposium
|
Advances in Emerging Electronic Nanomaterials: Towards Next-Generation Microelectronics
|
| Presentation Title |
Structural Analysis of P Ion Implanted Pt Thin Films |
| Author(s) |
Taichi Hombo, Horibe Yoichi, Manabu Ishimaru, Koki Imai, Yusei Ono, Yasuhiro Fukuma |
| On-Site Speaker (Planned) |
Taichi Hombo |
| Abstract Scope |
The spin Hall effect (SHE) is the core technology of “spin orbitronics” that drastically reduces the power consumption of devices. Our previous study revealed that significantly larger SHEs are realized in ion implanted Pt [1,2]. To clarify the origin of the giant SHE, we investigated atomistic structures of P ion implanted Pt thin films by x-ray diffraction and transmission electron microscopy. Pt thin films deposited on Si/SiO2 substrate were irradiated with 30 keV P ions to fluences of 8.0, 11.0, and 15.0 × 1016 cm-2. The as-implanted samples were amorphous and the thickness increased with ion fluence. This amorphous layer crystallized to PtP2 after thermal annealing. It was found that the physical properties are correlated with the formation of crystalline PtP2.
[1] U. Shashank et al., Phys. Rev. B 107, 064402 (2023).
[2] U. Shashank et al., Adv. Quantum Technol. 4, 2000112 (2021). |