About this Abstract |
Meeting |
MS&T24: Materials Science & Technology
|
Symposium
|
Energy Materials for Sustainable Development
|
Presentation Title |
Improved Thermoelectric Properties of SiC with Optimized In-Situ Formed Transitional Boride/Carbide Network Microstructures |
Author(s) |
Salih Cagri Ozer, Melis Aleyna Isik, Servet Turan |
On-Site Speaker (Planned) |
Servet Turan |
Abstract Scope |
Forming transitional boride/carbide network microstructures overcame the problem of the interrelated relation of electrical and thermal conductivities by creating different mean free path lengths for electrical carriers and phonons, simultaneously increasing electrical, and decreasing thermal conductivities, resulting in an improved ZT value of SiC for thermoelectric applications. SiC ceramics with in-situ TiB2 network microstructures were prepared by coating different compositions of TiC and B4C powder mixtures on SiC granules and spark plasma sintering. Phase and microstructure analyses were carried out by XRD and SEM. Electrical properties were measured by the four-point probe method. Thermal diffusivity and CP were measured by laser flash analysis and DSC to calculate the thermal conductivity. in-situ TiB2 network structures with excess B4C or C were obtained successfully during the SPS process, which increased electrical conductivity and decreased thermal conductivity simultaneously and maintained a minimal loss of the Seebeck coefficient thanks to the excess B4C. |