| About this Abstract |
| Meeting |
2023 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials: Preparation, Properties, Modeling & Applications
|
| Presentation Title |
Group IV-V Based Lamellar Thin Films: A Path Toward Novel 2D Materials |
| Author(s) |
Mathieu Stoffel, Alix Valdenaire, Sébastien Geiskopf, Xavier Devaux, Erwan André, Cédric Carteret, Alexandre Bouché, Michel Vergnat, Hervé Rinnert |
| On-Site Speaker (Planned) |
Mathieu Stoffel |
| Abstract Scope |
Group IV-V semiconductor alloys have gained a renewed interest due to their lamellar structure. This property opens the route toward novel 2D group IV-V materials such as 2D-SiP or 2D-GeP. The former is predicted to be a direct bandgap material while the latter is characterized by a strong in-plane anisotropy. So far, only few works have concerned the growth and the characterization of Si:P and Ge:P thin films.
Here we show that annealing Si:P films above 950°C leads to the formation of orthorhombic SiP. For Ge:P films, the formation of monoclinic GeP is observed after annealing at 450°C. Above 500°C, P desorption occurs and only Ge remains in the films. Microstructural investigations reveal the coexistence of P-doped Si(Ge) grains with micrometer sized SiP (GeP) grains, which exhibit a lamellar structure. Atomically resolved chemical maps for Si and P atoms are in good agreement with the atomic structure of orthorhombic SiP. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Other, Characterization, |