| Abstract Scope |
Thin-film transistors made of solution-processable semiconductors hold great promise in enabling emerging applications requiring cost-effective electronics at scale. However, they suffer from low performance with carrier transport limited by material defects formed during low-temperature, solution-based deposition processes. In this talk, we show that ordered-defect compound semiconductors capable of forming benign defect complexes can simultaneously achieve high performance and solution processability. Especially, thin films of ordered-defect compound CuIn5Se8 with precisely controlled and atomically uniform composition can be deposited from solution. With defect pair compensation, CuIn5Se8 transistors exhibit defect-tolerant, band-like electron transport supplying an output current density above 35 µA/µm, with a large on/off ratio greater than 106, small subthreshold swing of 189±21 mV/dec, and high field-effect mobility of 58±10 cm2/V-s, together with excellent uniformity and stability. CuIn5Se8 transistors can be monolithically integrated with those employing solution-deposited semiconducting carbon nanotubes to form three-dimensional high-speed complementary logic gates and ring oscillators with a short stage delay of 75 ns. They can drive micrometre-sized light-emitting diodes to a high current density above 200 A/cm and realize high-resolution active-matrix displays with pixels per inch greater than 500. |