About this Abstract |
Meeting |
2025 TMS Annual Meeting & Exhibition
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Symposium
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Advanced Characterization Techniques for Quantifying and Modeling Deformation
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Presentation Title |
Relaxation mechanism of highly strained monocrystalline semiconductor radial hetero-nanowires |
Author(s) |
Slawomir Kret, Dorota Janaszko, Serhii Kryvyi |
On-Site Speaker (Planned) |
Slawomir Kret |
Abstract Scope |
Monocrystalline hetero-nanowires (HNWs) are ideal model structures for studying nanomechanical behavior and defect formation during strain relaxation at nanoscale objects with big surface-to-volume ratios. We investigate residual strain fields and dislocation networks at the core-shell interface in individual HNWs using high-resolution scanning transmission electron microscopy (HRSTEM). Scanning electron nanodiffraction combined with finite element modeling is employed to reconstruct 3D lattice distortions in core-shell NWs. Our study reveals that the dislocation network at the CdTe core and ZnTe shell interface comprises 60° dislocations and dissociated Lomer dislocations. The dislocation spacing is influenced by the shell’s local thickness and the core diameter, indicating partial relaxation of the HNWs. Molecular dynamics (MD) and molecular statics (MS) simulations provide insights into dislocation characteristics, stability, and formation probabilities, aligning qualitatively with TEM experimental studies. In HNWs with stacking faults or nano-twins in the core or shell, static Cotrell-Lomer dislocations are observed. |
Proceedings Inclusion? |
Planned: |
Keywords |
Characterization, Mechanical Properties, Nanotechnology |