| About this Abstract |
| Meeting |
MS&T23: Materials Science & Technology
|
| Symposium
|
2023 Undergraduate Student Poster Contest
|
| Presentation Title |
Growth and Doping of α-(AlxGa1-x)2O3 Using Suboxide Molecular-beam Epitaxy |
| Author(s) |
Kira Martin, Jacob Steele, Darrell G. Schlom |
| On-Site Speaker (Planned) |
Kira Martin |
| Abstract Scope |
α-(AlxGa1-x)2O3 has the potential to be the largest bandgap and largest breakdown field semiconductor making it a useful material for high power and ultra-high frequency devices. In order to be conductive and useful, α-(AlxGa1-x)2O3 must be doped. This work attempted to dope α-(AlxGa1-x)2O3 with Sn during suboxide molecular-beam epitaxy (S-MBE). During growth it was observed the growth rate increased when the SnO2 source was used due to metal-oxide catalyzed epitaxy (MOCATAXY). High quality single-phase α-(AlxGa1-x)2O3 thin films were grown by S-MBE at different Al compositions, doping levels, and thicknesses. However, the Sn doping resulted in insulating films at all tested conditions, and it is unclear if the Sn is being incorporated into the films during growth. |