About this Abstract |
Meeting |
2025 TMS Annual Meeting & Exhibition
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Symposium
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Chemistry and Physics of Interfaces
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Presentation Title |
Modification of Defects Dynamics in Ga(Al)As Heterostructures by Photo-Doping |
Author(s) |
Ella Kartika Pek, Chao Jiang, Kevin D. Vallejo, Brelon J. May, Amey Khanolkar, Zilong Hua, Kaustubh Bawane, Anshul Kamboj, Marat Khafizov, David Hurley, Farida Selim, Trent A. Garrett, Maddison D. Nordstrom, Paul J. Simmonds, Cody A. Dennett |
On-Site Speaker (Planned) |
Ella Kartika Pek |
Abstract Scope |
Recent studies have shown that heterostructures in oxide composite systems exhibit high radiation tolerance, which is hypothesized to be caused by defect annihilation/segregation at interfaces. We test this hypothesis by studying Ga(Al)As heterostructures, consisting of GaAs bulk substrate, GaAlAs alloy, and GaAs/AlAs superlattice with varying interface densities. We grew the samples using molecular beam epitaxy (MBE), where the interfaces are defined with atomic precision. The samples were then irradiated with energetic protons to fluences of 10^13 ions/cm^2 and 10^14 ions/cm^2 to introduce lattice defects without amorphizing the samples. Through transient reflectivity measurement, we observed a mechanism that suggests a photo-doping modification of defects in the samples with interfaces. This observation is supported by density functional theory calculations of the migration energy of charged and neutral lattice defects in the superlattices. |
Proceedings Inclusion? |
Planned: |
Keywords |
Thin Films and Interfaces, Characterization, Modeling and Simulation |