| Abstract Scope |
We developed pressureless silver sintering process of SiC MOSFET module with silver finish Si3N4 AMB substrate for 1200V/200A automotive power module. Pressureless sintering condition was 240 ℃, 90 min in vacuum and nitrogen gas. As-sintered bonding strength, bonding layer thickness (BLT), void content and densification were 39 MPa, 71.4㎛, 2% and 90.5%, respectively. The shear strength, BLT, densification and microstructure of silver sintered layer were observed before/after thermal cycling test (-40-125 ℃, 700 cycles, TCT) and high temp storage test (200 ℃, 1000h, HTST). The shear strength and densification after TCT and HTST were 35 MPa and 40.5 MPa, and 92.8% and 94.8%. On resistance and switching efficiency were 7.2 mΩ and 10.7mJ, Ag sintering was superior to soldering interconnets in power module characteristics. |