About this Abstract |
Meeting |
2025 TMS Annual Meeting & Exhibition
|
Symposium
|
Electronic Packaging and Interconnection Materials II
|
Presentation Title |
Thermal-Structural Coupling Analysis of Cu-Cu Hybrid Bonding in 3D Stacked Die Configurations |
Author(s) |
Mohd Sharizal Abdul Aziz, Zheng Lin Goh, C.Y. Khor |
On-Site Speaker (Planned) |
Mohd Sharizal Abdul Aziz |
Abstract Scope |
This study investigates the warpage effects in 3D stacked die configurations employing copper-copper (Cu-Cu) hybrid bonding under thermal cycling conditions, critical for semiconductor device reliability. Using Ansys simulations with Thermal-Structural Coupling, the research explores temperature distribution, thermal strain, and Von Mises stress across varying Cu-Cu hybrid bonding heights. The findings reveal uniform heat transfer throughout the thermal cycles, with significant stress concentrations at the corner bonding interfaces. Reducing the Cu-Cu hybrid bonding height from 0.025mm to 0.017mm effectively mitigates thermal strain and stress, with the 0.017mm height proving optimal for minimizing warpage effects. This research offers essential insights for enhancing semiconductor packaging reliability, addressing industry demands for energy-efficient, compact devices, and advancing innovation in semiconductor engineering. |
Proceedings Inclusion? |
Planned: |
Keywords |
Modeling and Simulation, Copper / Nickel / Cobalt, Process Technology |