| Abstract Scope |
In order to quantitatively understand the mechanism and reliability of materials, it is necessary to understand the elementary processes of materials phenomena. For this purpose, in-situ observations by high resolution STEM are very powerful for directly understanding the elementary processes in materials. In this study, various in-situ STEM techniques such as nanoindentation, MEMS holder, electron beam irradiation and leaser heating have been applied for Al2O3 and ZrO2. The dynamic behavior of dislocations and grain boundaries (GBs), crack propagation, and diffusion process were observed at an atomic scale. It was found that these processes are strongly dependent on the crystal orientation and tensile direction. It was also found that GB migration behavior is different, depending on GB characters. That is, GB structural units are sequentially changes during GB migration in CSL GB, but GB disconnections are formed in high angle GBs. |