| Abstract Scope |
Epitaxial integration of oxides with semiconductor substrates is often limited by the lattice mismatch between the two material systems and their dissimilar chemical properties. However, in the case of 2D materials, the strict requirements of traditional epitaxy can be mediated by the weak van der Waals interactions. As a result, a 2D material, such as graphene, can allow remote epitaxial registry with a substrate. In the present work, we have investigated the potential of graphene oxide (GO) as an epitaxy-enabling agent for the pulsed-laser deposition (PLD) growth of strontium titanate (SrTiO3, STO) on silicon native oxide. After SrO-assisted deoxidation of the silicon surface, we have determined that GO can direct the growth of STO to a smooth, compact, and pinhole-free layer, with single (100) out-of-plane orientation, which was further overgrowth with functional oxides, such as PbZr1–xTixO3. |