| About this Abstract |
| Meeting |
MS&T24: Materials Science & Technology
|
| Symposium
|
Advances in Dielectric Materials and Electronic Devices
|
| Presentation Title |
Lead-Free Bismuth-based Halide Perovskite with Temperature-Driven Dual Dielectric Switching |
| Author(s) |
Shivam Aggarwal, Dhananjay Dey, Tanmoy Maiti |
| On-Site Speaker (Planned) |
Shivam Aggarwal |
| Abstract Scope |
Organic-inorganic hybrid metal halides with temperature-driven switchable dielectric properties are gaining attention for potential applications in optoelectronic information technology. We synthesized and investigated the lead-free novel halide perovskite, ethyl-ammonium bismuth iodide (EBI). EBI single crystals were grown by a controlled slow-cooling approach of the precursor solution. EBI is found to exhibit two unique phase transformations in temperature dependent single-crystal XRD. It changes from one monoclinic phase (P21/c) to another monoclinic phase (C2/c) at 230K. Further, monoclinic (C2/c) to hexagonal phase (P-31c) transition occurs at 260 K. These phase transitions are caused by ordering of organic molecule ethyl-ammonium in perovskite structure. Temperature-dependent dielectric studies corroborates well with these phase transitions. EBI exhibits superior temperature-responsive switchable dielectric performance. |