| About this Abstract |
| Meeting |
MS&T24: Materials Science & Technology
|
| Symposium
|
Advances in Dielectric Materials and Electronic Devices
|
| Presentation Title |
Off-State Current Characteristics of Vertical-Channel FET Using single-crystal Indium Oxide |
| Author(s) |
Kazuma Furutani, Kazuki Tsuda, Masashi Oota, Takanori Matsuzaki, Tatsuya Onuki, Yuto Yakubo, Ryosuke Motoyoshi, Hiromi Sawai, Fumito Isaka, Shunpei Yamazaki |
| On-Site Speaker (Planned) |
Kazuma Furutani |
| Abstract Scope |
Oxide semiconductors, the mainstream of which is IGZO, have been extensively researched and widely applied to displays and VLSI. For higher operation speed, we have been developing FETs using single crystal In2O3, which is known to have higher mobility than IGZO. Since the effective mass of a hole in In2O3 is larger than that in Si, an FET using In2O3 should achieve a low off-state current like an FET using IGZO. We have prototyped a vertical-channel FET (VFET) using single crystal In2O3 as a channel material and confirmed that the VFET has both a high on-state current and a low off-state current. The off-state current of the VFET, which is of the order of 10-21 A/μm, is lower than that of a Si FET by almost ten orders of magnitude. Using single crystal In2O3 for VLSI will reduce power consumption of servers and other devices. |