| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advances and Discoveries in Non-equilibrium Driven Nanomaterials and Thin Films
|
| Presentation Title |
Light Assisted Resistive Switching Behaviour of PLD Grown VO2/TiO2 Thin Films |
| Author(s) |
Chhotrai Soren, Rajesh Kumar Jha, Ankur Goswami |
| On-Site Speaker (Planned) |
Chhotrai Soren |
| Abstract Scope |
A memristor switches across multiple stable states at a very low energy cost, deeming it suitable for neuromorphic application. Transition metal oxides (TMOs) are suitable materials for the fabrication of memristor showcasing resistive switching due to different physiochemical mechanisms based on ion migration, phase change, ferroelectric, spintronic, photonic migration, and metal-insulator transition (MIT). Owing to the abundance of materials showing MIT for vested interest of neuromorphic application VO2 shows MIT at near room temperature. VO2 undergoes a transition from the low-temperature monoclinic (M1) phase to the tetragonal (R) phase at a temperature above 68 ℃, along with the occurrence of several unstable phases during the transition. The transition temperature of VO2 can also be tuned to a higher or lower value under the effect of tensile or compressive strain in the lattice under the influence of an electric field, magnetic field, and the illumination of a specific wavelength of light. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Electronic Materials, Thin Films and Interfaces |