| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials II
|
| Presentation Title |
Electromigration Behavior of Direct-Bonded Nano-Twinned Ag-Cu Bumps |
| Author(s) |
Yung-Pei Lin, Peng Hsiang Hsu, Fan-Yi Ouyang |
| On-Site Speaker (Planned) |
Peng Hsiang Hsu |
| Abstract Scope |
With the shrinking size of electronic devices, traditional solder joint packaging technology is limited by the physical limitations of bump pitches, making it more difficult to improve the bandwidth and performance of electronic devices. To resolve these issues, the metal-to-metal direct bonding process can effectively provide thinner interconnects and fine pitches in advanced package technology. When the shrinking size of devices continues, more serious reliability issues in electronic devices may occur. Electromigration has been reported to cause interconnect open-circuit failure. This study investigated the electromigration behavior of highly-(111) oriented nano-twinned Ag and nano-twinned Cu-doped Ag bumps bonded by the thermal compressive bonding process. The electromigration test was conducted under a current density of 3.0×105 A/cm2 at 150 °C. The microstructural evolution during electromigration of both nano-twinned Ag and nano-twinned Cu-doped Ag bumps was examined and compared. Meanwhile, the corresponding failure mechanism was discussed in detail. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Thin Films and Interfaces, Joining |