About this Abstract |
Meeting |
Materials Science & Technology 2020
|
Symposium
|
Materials Design through AI Composition and Process Optimization
|
Presentation Title |
A Physics-informed AI Assistant for Atomic Layer Deposition |
Author(s) |
Noah H. Paulson, Angel Yanguas-Gil, Steven Letourneau, Jeffery Elam |
On-Site Speaker (Planned) |
Noah H. Paulson |
Abstract Scope |
Atomic layer deposition (ALD) is a method for depositing thin films for applications including microelectronics, energy storage, and biomedical implants. Depositing conformal films with atomic precision relies on a self-limiting reaction between two precursors. For a new set of precursors or reactor, determining the values of parameters that result in a high quality film is a laborious manual process that relies on the experience and intuition of the operator. In this work, we present a physics-informed AI assistant that automatically tunes these processing parameters. This software, based in Bayesian optimization, leverages readings of mass-gain per cycle to sequentially suggest parameter settings and drive towards an ALD process with uniform film thickness and low precursor consumption. We demonstrate this approach for a variety of target chemistries including Al2O3, TiO2, and W. |