| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XXIV
|
| Presentation Title |
Simulation of Polycrystalline Microstructure Formation in Thin Film for Nanoscale Device Using Phase-Field Method |
| Author(s) |
Hwanwook Lee, Jungin Park, Daeun Choi, Yongwoo Kwon |
| On-Site Speaker (Planned) |
Yongwoo Kwon |
| Abstract Scope |
We present our phase-field model for polycrystalline microstructure formation in a thin film deposited on a nonplanar substrate. Fabricating current nanoscale logic and memory devices including GAA(gate-all-around)-FET, 3D NAND, and DRAM requires conformal thin films deposited on a nano-trench or nano-hole with a high aspect ratio of 100 or higher. Controlling the quality of thin films, i.e., microstructure such as grain structure, thermal groove, etc, during processing is very crucial for the performance and reliability of the fabricated devices. We constructed a set of differential equations for gas transport, amorphous film formation, and crystallization followed by grain growth including stochastic nucleation, and developed a C++ code to numerically solve the differential equations by finite differencing. Our code can simulate amorphous and polycrystalline films as well as amorphous-to-polycrystalline transition, by which both metallic and nonmetallic films can be modeled. Some simulation examples and comparison to experiments will be shown. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Computational Materials Science & Engineering, Thin Films and Interfaces |