| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials II
|
| Presentation Title |
The Effect of Grain Size on the Chemical-Mechanical-Planarization Removal Rate of Cu Films |
| Author(s) |
Yi-Chen Chung, Chih Chen |
| On-Site Speaker (Planned) |
Yi-Chen Chung |
| Abstract Scope |
The demand for high-density and high-performance integrated circuits has driven advancements in three-dimensional integrated circuit packaging, where copper plays a crucial role due to its excellent electrical and thermal conductivity. Chemical mechanical planarization (CMP) has emerged as a pivotal technique in the manufacturing of 3D ICs to achieve precise surface planarization and recess control.
This study focuses on the grain size effect on the CMP removal rate of Cu films. Various microstructures, including fine-grained, (111)-oriented and regular grain structures. By using different electrolytes and/or subsequent annealing processes, Cu films with various grain sizes were fabricated. The microstructural analyses (grain size, orientation) and mechanical properties (hardness) were examined. The surface roughness and profiles were analyzed by AFM, SEM, EBSD, FIB. The grain sizes of fine-grained Cu films have dimensions below 200 nm. More details will be presented in the conference. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Electronic Materials, Copper / Nickel / Cobalt |