| About this Abstract |
| Meeting |
2024 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials
|
| Presentation Title |
Investigation of In-passivated Cu-to-Cu Direct Bonding With a Sn Diffusion Barrier Layer |
| Author(s) |
Yi-Chen Tseng, Po-Yu Kung, Yung-Sheng Lin, Yun-Ching Hung, C. Robert Kao |
| On-Site Speaker (Planned) |
Yi-Chen Tseng |
| Abstract Scope |
The 3D-IC technology has emerged as a promising approach to extend Moore's law, with hybrid bonding being the essential technique for vertical stacking in 3D integration. In particular, Cu-to-Cu direct bonding has been recognized as the primary method for creating high-density interconnects. However, this direct bonding process requires high temperature, high pressure and an extremely flat surface.
Consequently, in this study, indium is electroplated onto the Cu substrate due to its excellent plasticity, which can eliminate planarization processes. Besides, the low melting point of In allows for low-temperature bonding. To overcome the rapid intermetallic formation of Cu and In, Sn is electroplated as a diffusion barrier layer between the Cu substrate and In layer. After the samples are prepared, the thermal compressive bonding experiment will be conducted under different temperatures and pressures. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Thin Films and Interfaces, Characterization |