| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Functional Nanomaterials 2020: Translating Innovation into Pioneering Technologies
|
| Presentation Title |
New Materials and Devices Beyond Silicon and Field-effect Transistors |
| Author(s) |
Qing Cao |
| On-Site Speaker (Planned) |
Qing Cao |
| Abstract Scope |
Conventional scaling of Si metal-oxide-semiconductor field-effect transistors as dictated by the Moore’s law has led to faster and more power-efficient devices with exponentially diminishing cost in the last five decades. However, it has become increasingly difficult with Si transistors approaching their physical limits. In this talk, I will review our recent efforts on exploiting novel electronic materials to realize new types of electronic devices that will potentially allow us to sustain the current pace of performance growth for solid-state electronics. On one hand, we have established carbon nanotubes as a promising material to take torch from Si for constructing the next logic switch with both better scalability into smaller footprint and processability toward monolithic three-dimensional integration. On the other hand, we suggest electrochemical random access memory based on oxides as promising device element to enable new computing paradigms beyond the von Neumann architecture. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |