| About this Abstract |
| Meeting |
MS&T24: Materials Science & Technology
|
| Symposium
|
Advances in Emerging Electronic Nanomaterials: Towards Next-Generation Microelectronics
|
| Presentation Title |
Phase-Change and Interface-Type Oxide Memristive Devices for Neuromorphic Computing |
| Author(s) |
Sundar Kunwar, Nicholas Cucciniello , Di Zhang, Pinku Roy, Aiping Chen |
| On-Site Speaker (Planned) |
Sundar Kunwar |
| Abstract Scope |
Emergent metal-oxide resistive switching (RS) devices possess great potentials not only for non-volatile memory application but also for neuromorphic computing as they can emulate biological synaptic and neuronal functions. In this talk, I will discuss our recent efforts on exploiting RS characteristics in phase-change materials such as vanadium oxide (VO2) and interface-type metal/metal oxide heterostructures such as Au/Nb:STO. Our recent study on the VO2 based memristive devices have suggested that a reconfigurable RS i.e., both volatile (as neurons) and non-volatile (as synapse) can be achieved, enabling the creation of more energy and area efficient artificial neural networks for neuromorphic computing. Whereas the Au/Nb:STO system is capable of emulating synaptic functions such as long-term and short-term plasticity based on its multi-level non-volatile resistance states that can be controlled by the modulation of metal/oxide Schottky interface. |