| Abstract Scope |
Phase-field simulations of facetted growth require special attention to the representation of strongly anisotropic properties of solid-liquid interfaces. The present work deals with the numerical study of isothermal solidification of silicon (Si) using the thin interface phase-field model developed by Karma et al. (Phys. Rev. E 57, 4323, 1998). Based on physical considerations and on the experimental results of Yang et al. (Prog. Photovolt: Res. Appl., 22, 574-580, 2014), we propose analytical anisotropy functions of the interface energy and attachment kinetics. These functions aim to trigger {111} facets formation. We find that both functions are essential to reproduce the early growth shapes while only that of the surface energy is involved at equilibrium (Boukellal et al., J. Cryst. Growth, 522, 37-44, 2019). |