| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials II
|
| Presentation Title |
Plasma-Free Surface Modification in
Fine-Pitch Cu/SiO2 Hybrid Bonding
|
| Author(s) |
Pin-Lin Chen, Chih Chen |
| On-Site Speaker (Planned) |
Pin-Lin Chen |
| Abstract Scope |
Copper/SiO2 hybrid bonding has been recognized as one of the key technologies for achieving ultra-high-density chip packaging. This study demonstrates a plasma-free wet treatment process that creates a highly hydrophilic dielectric surface after immersion in KOH/NaOH, significantly reducing both pretreatment costs and time. Room temperature dielectric prebonding in 1 min is successfully achieved followed by post-annealing at 200˚C for two hours without external pressure. The cross-sectional bonded interface is inspected by focused ion beam (FIB) and scanning electron microscopy (SEM), which shows no obvious gaps in the Cu-Cu and SiO2-SiO2 interfaces, indicating good bonding quality. Specific contact resistivity of 3.6×10-8 Ω·cm2 was measured utilizing the four-point probe in the cross-bar structure. The results shows that NaOH/KOH is a promising way for chip-to-wafer Copper/SiO2 hybrid bonding. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Copper / Nickel / Cobalt, Other |